The semiconductor industry’s move to development and high volume manufacturing of sub-10 nm generation process devices is driving simultaneous demands for performance enhancement and cost reduction. These requirements necessitate endless innovation, and the past year has been highlighted by unprecedented achievements in 193 nm immersion scanner performance and productivity. There have also been great strides in advanced multiple patterning solutions, directed self-assembly, and 450 mm technology.
These crucial areas of innovation were featured prominently at the 11th annual LithoVision technical symposium held earlier this year. A record audience of well over 550 international representatives from across our industry joined the annual event where renowned experts from Photronics, Intel, KLA-Tencor, Tokyo Electron, Applied Materials and Nikon discussed vital lithography trends, challenges, and solutions. The agenda showcased an in-depth review of the State of Lithography, and thought-provoking presentations on the Industry Roadmap and Future Device Trends; Enabling Production at 14 nm and Beyond; Design-for-Yield; and Extending Immersion with Multiple Patterning and DSA. In addition, the interactive panel discussion focused on “Patterning to 7 nm and Beyond…,” while the evening poster session featured contributions from a multitude of partner companies addressing a broad-range of relevant topics. This edition of the Nikon eReview includes highlights of several of the LithoVision presentations, and full event materials are available to customers upon request.
In other news, earlier this year Nikon launched the NSR-S630D immersion scanner. The S630D leverages established immersion technology, while incorporating key innovations to deliver overlay matching below 2.5 nm and throughput greater than 250 wafers per hour. In addition, Nikon Corporation received Intel’s Preferred Quality Supplier Award for their performance in 2013.
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